Adiabatic stabilization of excitons in intense terahertz laser

摘要

High-precise calculation of near-infrared absorption and transient spectra inbulk semiconductors irradiated by an intense terahertz (THz) laser shows that,the ionization rate of the ground-state exciton, probed through the dynamicFano resonance, may decrease with the increase of the THz laser intensity. Thiscounterintuitive effect indicates the excitons are stabilized against thefield-ionization. The much lower Rydberg energy and ``atomic unit'' of laserintensity for excitons, and the possibility of creating excitons from the``vacuum state'' allow observing the excitonic stabilization in experiments, incontrast to the case of atomic stabilization.